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7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
APPLICATIONS:
* * *
2N3419
Power Supply Pulse Amplifier High Frequency Power Switching
FEATURES:
* * * * *
Meets MIL-S-19500/393 Collector-Base Voltage: up to 125V Peak Collector Current: 5A High Power Dissipation in TO-5: 15W @ TC = 100C Fast Switching
3 Amp, 125V, NPN Silicon Power Transistors
JAN, JTX, JTXV, JANS
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.
TO-5
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
VCBO* VCEO* VEBO* IC * IC * T STG* T J* PT *
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage D.C. Collector Current Peak Collector Current Storage Temperature Operating Junction Temperature Power Dissipation T C = 25C Ambient T C = 100C Case
VALUE
125 80 8 3 5 -65 to 200 -65 to 200 1.0 15
UNITS
Volts Volts Volts Amps Amps C C Watts Watts
* Indicates
MIL-S-19500/393
MSC0981A.DOC 12-02-98
2N3419
ELECTRICAL CHARACTERISTICS: CHARACTERISTICS: (25Case Temperature Unless Otherwise Noted)
SYMBOL
BVCEO* ICEX* ICEO* IEBO* hFE*
CHARACTERISTIC
Collector-Emitter Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current D.C. Current Gain (Note 1)
TEST CONDITIONS
IC = 50 mAdc, Cond. D (Note 1) VEB = 0.5 Vdc, Cond. A, VCE = 120 Vdc VEB = 0.5 Vdc, Cond. A, TA = 150C, VCE = 120 Vdc VCE = 60 Vdc, Cond. D VEB = 6 Vdc, Cond. D VEB = 8 Vdc, Cond. D IC = 100 mAdc, VCE = 2 Vdc IC = 1 Adc, VCE = 2 Vdc IC = 2 Adc, VCE = 2 Vdc IC = 5 Adc, VCE = 5 Vdc IC = 1 Adc, VCE = 2 Vdc, TA = - 55C IC = 1 Adc, IB = 0.1 Adc IC = 2 Adc, IB = 0.2 Adc IC = 1 Adc, IB = 0.1 Adc IC = 2 Adc, IB = 0.2 Adc VCE = 5 Vdc, TC = 100C VCE = 37 Vdc, TC = 100C VCE = 80 Vdc, TC = 100C IC = 3 Adc, L = 10 mH, Base Open IC = 3 Adc, L = 40 mH, VClamp = 85V IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz VCB = 10 Vdc, IE = 0, f = 1 MHz IC = 1 Adc, IB1 = - IB2 = 0.1 Adc IC = 1 Adc, IB1 = - IB2 = 0.1 Adc
VALUE Min. Max.
80 ---------------20 20 15 10 10 ------0.6 0.7 3 0.4 120 45 ---0.3 50 5.0 0.5 10 ---60 ---------0.25 0.5 1.2 1.4 -------------
Units
Vdc
Adc Adc Adc Adc Adc
---------------Vdc Vdc Vdc Vdc Adc Adc mAdc mj
VCE(sat)*
Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Saturation Voltage (Note 1) Forward Biased Second Breakdown Unclamped Reverse Biased Second Breakdown clamped Reverse Biased Second Breakdown Gain Bandwidth Product Output Capacitance Turn-on Time Turn-off Time
VBE(sat)* IS/b*
ES/b*
ES/b* fT * COb* ton toff
125 26 ----------
---160 150 0.3 1.2
mj MHz pf
s s
Note 1: Pulse Test: Pulse width = 300 Sec., duty cycle 2%. * Indicates MIL-S-19500/393
MSC0981A.DOC 12-02-98
2N3419
PACKAGE MECHANICAL DATA:
1.500 [38.10] MIN .031 [.79] .240 [6.35] .260 [6.60] .010 [.25] .030 [.76] 45 .029 [.74] .045 [1.14] .200 [5.08] O.305 [7.75] O.335 [8.51] .100 [2.54] O.017 +.002 [.432] -.001
[+.051] [.025]
.100 [2.54] O.335 [8.51] O.370 [9.40]
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
MSC0981A.DOC 12-02-98

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